Zvn4424a/c – Diodes ZVN4424A/C User Manual
Page 3
ZVN4424A/C
ZVN4424A/C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP
MAX. UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
240
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8
1.3
1.8
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
40V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
100
µ
A
µ
A
V
DS
=240 V, V
GS
=0
V
DS
=190 V,
V
GS
=0V, T=125°C
On-State Drain Current
I
D(on)
0.8
1.4
A
V
DS
=10 V, V
GS
=10V
Static Drain-Source
On-State Resistance
R
DS(on)
4
4.3
5.5
6
Ω
Ω
V
GS
=10V,I
D
=500mA
V
GS
=2.5V,I
D
=100mA
Forward
Transconductance (1) (2)
g
fs
0.4
0.75
S
V
DS
=10V,I
D
=0.5A
Input Capacitance (2)
C
iss
110
200
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Common Source Output
Capacitance (2)
C
oss
15
25
pF
Reverse Transfer
Capacitance (2)
C
rss
3.5
15
pF
Turn-On Delay Time
(2)(3)
t
d(on)
2.5
5
ns
V
DD
≈
50V, I
D
=0.25A,
V
GEN
=10V
Rise Time (2)(3)
t
r
5
8
ns
Turn-Off Delay Time
(2)(3)
t
d(off)
40
60
ns
Fall Time (2)(3)
t
f
16
25
ns
(1)*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2% (2)Sample
Test
(3) Switching times measured with 50
Ω
source impedance and >5ns rise time on pulse generator