Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes ZVN4310G User Manual

Page 2: Zvn4310g, A product line of diodes incorporated

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ZVN4310G

Document number: DS33372 Rev. 4 - 2

2 of 5

www.diodes.com

January 2012

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZVN4310G








Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

100 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current

I

D

1.67 A

Pulsed Drain Current (Note 3)

I

DM

12 A




Thermal Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Power Dissipation

(Note 2)

P

D

3 W

Thermal Resistance, Junction to Ambient

(Note 2)

R

θJA

41.7 °C/W

Thermal Resistance, Junction to Leads

(Note 4)

R

θJL

8.84 °C/W

Operating and Storage Temperature Range

T

J

,

T

STG

-55 to +150

°C




Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage

BV

DSS

100 - - V

V

GS

= 0V, I

D

= 1mA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

- -

10

100

µA
µA

V

DS

= 100V, V

GS

= 0V

V

DS

= 80V, V

GS

= 0V, T

A

= 125°C

Gate-Source Leakage

I

GSS

- -

±20

nA

V

GS

= ±20V, V

DS

= 0V

On-State Drain Current

I

D(on)

9 - - A

V

GS

= 10V, V

DS

= 10V

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

V

GS(th)

1 - 3 V

V

DS

= V

GS

, I

D

= 1mA

Static Drain-Source On-Resistance

R

DS (on)

-

0.4
0.5

0.54
0.75

Ω

V

GS

= 10V, I

D

= 3.3A

V

GS

= 5V, I

D

= 1.5A

Forward Transconductance

g

fs

0.6 - - S

V

DS

= 10V, I

D

= 3.3A

DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance

C

iss

- -

350

pF

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- -

140

pF

Reverse Transfer Capacitance

C

rss

- - 20

pF

Turn-On Delay Time

t

D(on)

- - 8 ns

V

DD

= 25V, I

D

= 3A, V

GEN

= 10V,

R

GS

= 50

Turn-On Rise Time

t

r

- - 25

ns

Turn-Off Delay Time

t

D(off)

- - 30

ns

Turn-Off Fall Time

t

f

- - 16

ns

Notes:

2. For a device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition.

3. Device mounted on minimum recommended pad layout test board, 10

μs pulse duty cycle = 1%.

4. Thermal resistance from junction to solder-point (at the end of the drain lead).

5. Short duration pulse test used to minimize self-heating effect.














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