Diodes ZXMN10A07F - Manual (Page 3)

ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
3 of 7
www.diodes.com
August 2012
© Diodes Incorporated
ZXMN10A07F
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
100 — — V V GS = 0V, I D = 250 μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 µA V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — 100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
2 — 4 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance (Note 9) R
DS (ON)
—
540 700
m Ω
V
GS
= 10V, I
D
= 1.5A
700 900 V GS = 6V, I D = 1A
Forward Transconductance (Notes 9 & 11) g
fs
— 1.6 — S V
DS
= 15V, I
D
= 1A
Diodes Forward Voltage (Note 9) V
SD
— 0.85 0.95 V T
J
= +25°C, I
S
= 1.5A, V
GS
= 0V
DYNAMIC CHARACTERISTICS
Input Capacitance (Notes 10 & 11)
C
iss
— 138 280
pF
V
DS
= 50V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance (Notes 10 & 11) C
oss
— 12 25
Reverse Transfer Capacitance (Notes 10 & 11) C rss
— 6 12
Gate Resistance (Notes 10 & 11) R
g
— 2 4 Ω f = 1MHz, V
GS
= 0V, V
DS
= 0V
Total Gate Charge (Notes 10 & 11) Q
g
— 2.9 6
nC
V GS = 10V, V DS = 50V,
I D = 1A
Gate-Source Charge (Notes 10 & 11) Q gs
— 0.7 1.5
Gate-Drain Charge (Notes 10 & 11) Q
gd
— 1 2
Reverse Recovery Time (Note 11) t
rr
— 27 60 ns T J = +25°C, I F = 1.8A,
di/dt = 100A/µs Reverse Recovery Charge (Note 11) Q
rr
— 12 — nC
Turn-On Delay Time (Notes 10 & 11) t
D(on)
— 1.8 —
ns
V GS = 10V, V DD = 50V,
R
G
= 6 Ω , I
D
= 1A
Turn-On Rise Time (Notes 10 & 11) t
r
— 1.5 —
Turn-Off Delay Time (Notes 10 & 11) t
D(off)
— 4.1 —
Turn-Off Fall Time (Notes 10 & 11) t f
— 2.1 —
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.