Zxmn10a08g, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMN10A08G User Manual
Page 4
ZXMN10A08G
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
voltage
V
(BR)DSS
100
V
I
D
= 250
A, V
GS
=0V
Zero gate voltage drain current
I
DSS
0.5
A
V
DS
= 100V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage
V
GS(th)
2.0
V
I
D
= 250
A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
R
DS(on)
0.25
⍀
V
GS
= 10V, I
D
= 3.2A
0.30
⍀
V
GS
= 6V, I
D
= 2.6A
Forward transconductance
fs
5
S
V
DS
= 15V, I
D
= 3.2A
Dynamic
Input capacitance
C
iss
405
pF
V
DS
= 50V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
28.2
pF
Reverse transfer capacitance
C
rss
14.2
pF
Switching
(†)
(‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time
t
d(on)
3.4
ns
V
DD
= 30V, I
D
= 1.2A
R
G
≅6.0⍀, V
GS
= 10V
Rise time
t
r
2.2
ns
Turn-off delay time
t
d(off)
8
ns
Fall time
t
f
3.2
ns
Gate charge
Q
g
4.2
nC
V
DS
= 50V, V
GS
= 5V
I
D
= 1.2A
Total gate charge
Q
g
7.7
nC
V
DS
= 50V, V
GS
= 10V
I
D
= 1.2A
Gate-source charge
Q
gs
1.8
nC
Gate drain charge
Q
gd
2.1
nC
Source-drain diode
Diode forward voltage
V
SD
0.87
0.95
V
T
j
=25°C, I
S
= 3.2A,
V
GS
=0V
Reverse recovery time
t
rr
27
ns
T
j
=25°C, I
S
= 1.2A,
di/dt=100A/
s
Reverse recovery charge
Q
rr
32
nC