Diodes ZXMN10A11G - Manual (Page 2)

ZXMN10A11G
Document Number DS32056 Rev. 6 - 2
2 of 8
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11G
ADVAN
CE I
N
F
O
RM
ATI
O
N Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
100 V
Gate-Source voltage V GS
±20 V
Continuous Drain current V
GS
= 10V
(Note 2)
I
D
2.4
A T
A
= 70°C (Note 2) 1.9
(Note 1) 1.7
Pulsed Drain current V
GS
= 10V (Note 3) I
DM
7.9 A
Continuous Source current (Body diode) (Note 2) I S
4.6 A
Pulsed Source current (Body diode) (Note3 ) I
SM
7.9 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 1)
P
D
2.0
16 W
mW/
°C
(Note 2)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 1)
R θJA
62.5
°C/W
(Note 2) 32.0
Thermal Resistance, Junction to Lead (Note 4) R θJL 9.8 °C/W
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
2. Same as note (1), except the device is measured at t
≤ 10 sec.
3. Same as note (1), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
4. Thermal resistance from junction to solder-point (at the end of the drain lead)