Zxmn10a25g new prod uc t, Electrical characteristics, Zxmn10a25g – Diodes ZXMN10A25G User Manual
Page 3
ZXMN10A25G
Document number: DS33568 Rev. 3 - 2
3 of 7
April 2014
© Diodes Incorporated
ZXMN10A25G
NEW PROD
UC
T
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
100 — — V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
—
—
0.5 µA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
2.0
—
4.0 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
—
—
125
mΩ
V
GS
= 10V, I
D
= 2.9A
—
—
150
V
GS
= 6.0V, I
D
= 2.6A
Forward Transfer Admittance
|Y
fs
|
—
7.3 — S
V
DS
= 15V, I
D
= 2.9A
Diode Forward Voltage
V
SD
—
0.85 0.95 V V
GS
= 0V, I
S
= 4.0A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 859 —
pF
V
DS
= 50V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
—
57
—
Reverse Transfer Capacitance
C
rss
—
33
—
Total Gate Charge
Q
g
— 9.6 —
nC
V
DS
= 50V, V
GS
= 5.0V, I
D
= 2.9A
Total Gate Charge
Q
g
—
17
—
nC
V
DS
= 50V, V
GS
= 10V, I
D
= 2.9A
Gate-Source Charge
Q
gs
—
3.8
—
Gate-Drain Charge
Q
gd
— 5.4 —
Turn-On Delay Time
t
D(on)
—
4.9
—
ns
V
DS
= 50V, V
GS
= 10V,
I
D
= 1.0 A
R
G
= 6.0
Turn-On Rise Time
t
r
—
3.7
—
Turn-Off Delay Time
t
D(off)
— 18 —
Turn-Off Fall Time
t
f
—
9.4
—
Body Diode Reverse Recovery Time
t
rr
— 40.5
ns
V
GS
= 0V, I
S
= 2.9A,
dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
— 62
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.