Diodes ZXM61P02F - Manual (Page 2)

ZXM61P02F
Document Number DS33478 Rev. 3 - 2
2 of 7
www.diodes.com
October 2013
© Diodes Incorporated
ZXM61P02F
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current V
GS
= 4.5V
T
A
= +25°C (Note 6)
T
A
= +70°C (Note 6)
I
D
-0.9
-0.7
A
Pulsed Drain Current (Note 7) I
DM
-4.9 A
Continuous Source Current (Body Diode) (Note 6) I
S
-0.9 A
Pulsed Source Current (Body Diode) (Note 7) I
SM
-4.9 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear Derating Factor
P
D
625
5
mW
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
200 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R
θJA
155 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
Thermal Characteristics