Diodes ZXMD63P02X - Manual (Page 2)

ZXMD63P02X
2
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R θ JA
143 °C/W
Junction to Ambient (b)(d) R θ JA
100 °C/W
Junction to Ambient (a)(e) R θ JA
120 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
-20 V
Gate- Source Voltage V
GS
±
12 V
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(b)(d)
(V
GS
=4.5V; T
A
=70°C)(b)(d)
I
D
-1.7
-1.35
A
Pulsed Drain Current (c)(d) I
DM
-9.6 A
Continuous Source Current (Body Diode)(b)(d) I
S
-1.4 A
Pulsed Source Current (Body Diode)(c)(d) I
SM
-9.6 A
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
P
D
0.87
6.9
W
mW/°C
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
P
D
1.04
8.3
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ISSUE 1 - JUNE 2004