Zxmd63p03x, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMD63P03X User Manual

Page 4

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ZXMD63P03X

S E M I C O N D U C T O R S

ISSUE 1 - OCTOBER 2005

4

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

-30

V

I

D

=-250

µA, V

GS

=0V

Zero Gate Voltage Drain Current

I

DSS

-1

µA

V

DS

=-30V, V

GS

=0V

Gate-Body Leakage

I

GSS

Ϯ100 nA

V

GS

=

Ϯ20V, V

DS

=0V

Gate-Source Threshold Voltage

V

GS(th)

-1.0

V

I

D

=-250

µA, V

DS

=V

GS

Static Drain-Source On-State Resistance (1)

R

DS(on)

0.185

0.27

V

GS

=-10V, I

D

=-1.2A

V

GS

=-4.5V, I

D

=-0.6A

Forward Transconductance (3)

g

fs

0.92

S

V

DS

=-10V,I

D

=-0.6A

DYNAMIC (3)

Input Capacitance

C

iss

270

pF

V

DS

=-25 V, V

GS

=0V,

f=1MHz

Output Capacitance

C

oss

80

pF

Reverse Transfer Capacitance

C

rss

30

pF

SWITCHING (2) (3)

Turn-On Delay Time

t

d(on)

2.6

ns

V

DD

=-15V, I

D

=-1.2A

R

G

=6.2

Ω, R

D

=6.2

(Refer to test
circuit)

Rise Time

t

r

4.8

ns

Turn-Off Delay Time

t

d(off)

13.1

ns

Fall Time

t

f

9.3

ns

Total Gate Charge

Q

g

7

nC

V

DS

=-24V,V

GS

=-10V,

I

D

=-1.2A

(Refer to test
circuit)

Gate-Source Charge

Q

gs

1.2

nC

Gate Drain Charge

Q

gd

2

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V

SD

-0.95

V

T

j

=25°C, I

S

=-1.2A,

V

GS

=0V

Reverse Recovery Time (3)

t

rr

21.4

ns

T

j

=25°C, I

F

=-1.2A,

di/dt= 100A/

µs

Reverse Recovery Charge(3)

Q

rr

15.7

nC

NOTES:

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ®2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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