Diodes ZVP4105A - Manual

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 50 Volt V
DS
* R
DS(on)
=10 Ω
* Low threshold
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-50 V
Continuous Drain Current at T
amb
=25°C I
D
-175 mA
Pulsed Drain Current I
DM
-520 mA
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-50 V I
D
=-0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-0.8 -2.0 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
10 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-15
-60
-100
µ A
µ A
nA
V
DS
=-50V, V
GS
=0V
V
DS
=-50V, V
GS
=0V, T=125°C (2)
V
DS
=-25V, V
GS
=0V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
10 Ω V
GS
=-5V,I
D
=-100mA
Forward Transconductance
(1)(2)
g
fs
50 mS V
DS
=-25V,I
D
=-100mA
Input Capacitance (2)(4) C
iss
40 pF
Common Source Output
Capacitance (2)(4)
C
oss
15 pF V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)(4)
C
rss
6 pF
Turn-On Delay Time (2)(3)(4) t
d(on)
10 ns
V
DD
≈ -30V, I
D
=-270mA
Rise Time (2)(3)(4) t
r
10 ns
Turn-Off Delay Time (2)(3)(4) t
d(off)
18 ns
Fall Time (2)(3)(4) t
f
25 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
(
4
)
E-Line
TO92 Compatible
ZVP4105A
3-435
D
G
S