Diodes ZVP3306A - Manual

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=14 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-60 V
Continuous Drain Current at T
amb
=25°C I
D
-160 mA
Pulsed Drain Current I
DM
-1.6 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-60 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-50
µ A
µ A
V
DS
=-60 V, V
GS
=0
V
DS
=-48 V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
-400 mA V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
14 Ω V
GS
=-10V,I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
60 mS V
DS
=-18V,I
D
=-200mA
Input Capacitance (2) C
iss
50 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
8 pF
Turn-On Delay Time (2)(3) t
d(on)
8 ns
V
DD
≈ -18V, I
D
=-200mA
Rise Time (2)(3) t
r
8 ns
Turn-Off Delay Time (2)(3) t
d(off)
8 ns
Fall Time (2)(3) t
f
8 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(
3
)
Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP3306A
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
I D
- D
ra
in
C
u
rr
e
nt (Amp
s
)
-0.8
-0.6
-0.4
0
-0.2
-1.0
Transfer Characteristics
Normalised R DS(on) and V GS(th) vs Temperature
Junction Temperature (°C)
Nor
m
ali
s
e
d
R
DS(on)
a
nd V
G
S(
th
)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai n- So
urc
e R
es
ista
nc e R DS(
on )
Gate Threshold Vo
ltage V GS(TH)
I D= 0.37A
0 -2 -4 -6 -8 -10
-1.0
-0.8
-0.6
-0.4
0
-0.2
0 -10 -20 -30 -40 -50
Saturation Characteristics
On-resistance vs Drain Current
I D- Drain Current (mA)
-6
0
-2
-4
-8
0 -2 -4 -6 -8 -10
-10
V DS-
Dra
in
Source
V
o
lt
ag
e (
V
ol
ts
)
R
D
S(on
)-
D
rain
So
ur
ce
O
n
R
e
sistan
ce
(
Ω
)
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts)
-0.6
0
-0.2
-0.4
-0.8
0 -2 -4 -6 -8 -10
-1.0
V GS= -20V
-16V
-6V
-7V
-8V
-5V
-4V
-16V
-9V
I D=
- 400mA
-200mA
-100mA
V DS=- 10V
V GS- Gate Source Voltage (Volts)
V GS= -10V
I D= -1mA
V GS= V DS
-1.2
-10V
-9V
-10V
-6V
2.6
180
10
1
100
-10 -100 -1000
V GS =-5V
V GS= -20V
-15V
-20V
-7V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
V GS =
-14V
-12V
I D
- Drain Curre
n
t (
A
mps)
V DS - Drain Source Voltage (Volts)
I D(
O
n
)-
On-Sta
te D
rain
C
urrent (Amp
s
)
ZVP3306A
3-429 3-430