Typical characteristics, Test circuits, Capacitance v drain-source voltage – Diodes ZXMP4A57E6 User Manual
Page 6: Capa c it a nc e ( p f) -v, Drain - source voltage (v), Gate-source voltage v gate charge, Q - charge (nc) -v
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ZXMP4A57E6
Document Number DS35238 Rev. 1 - 2
6 of 8
July 2013
© Diodes Incorporated
ZXMP4A57E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Typical Characteristics
(cont.)
0.1
1
10
0
200
400
600
800
1000
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C
C
apa
c
it
a
nc
e
(
p
F)
-V
DS
- Drain - Source Voltage (V)
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
I
D
= -4A
V
DS
= -20V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
-V
GS
G
ate-
S
our
c
e
V
oltage (
V
)
Test Circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
0.2mF
12V
Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
d(of )
V
DS
V
DD
R
D
R
G
Pulse width , 1mS
Duty factor 0.1%
V
DS
I
D
I
G
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