Diodes ZXMP4A16K - Manual (Page 4)

ZXMP4A16K
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
A
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
-40 V I
D
=-250 ␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
-1
␮A
V
DS
=-40V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-1.0 V I
D
=-250
␮A,
V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Width
Յ
300µs. Duty cycle
Յ
2%.
R
DS(on)
0.060
⍀
V
GS
=-10V, I
D
=-3.8A
0.100
⍀
V
GS
=-4.5V, I
D
=-2.9A
Forward transconductance
(*)(‡)
g fs
7.4 S V
DS
=-15V,I
D
=-3.8A
Dynamic
(‡)
Input capacitance C
iss
965 pF
V
DS
=-20V, V
GS
=0V,
f=1MHz
Output capacitance C
oss
180 pF
Reverse transfer capacitance C
rss
158 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time t
d(on)
4.0 ns
V
DD
=-20V, I
D
=-1A
R
G
=6.0 ⍀,V
GS
=-10V
Rise time t
r
6.0 ns
Turn-off delay time t
d(off)
36.8 ns
Fall time t
f
17.1 ns
Gate charge Q
g
16.5 nC V
DS
=-20V,V
GS
=-5V,
I
D
=-3.8A
Total gate charge Q
g
29.6 nC
V
DS
=-20V,V
GS
=-10V,
I
D
=-3.8A
Gate-source charge Q
gs
2.8 nC
Gate-drain charge Q
gd
8.1 nC
Source-drain diode
Diode forward voltage
(*) V
SD
-0.89 -1.2 V T
J
=25°C, I
S
=-3.8A,
V
GS
=0V
Reverse recovery time
(‡) t
rr
29.8 ns
T
J
=25°C, I
F
=-3.8A,
di/dt= 100A/
␮s
Reverse recovery charge
(‡) Q
rr
37.2 nC