Diodes ZXMP6A13FQ - Manual (Page 4)

ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
4 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ZXMP6A13FQ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60   V I
D
= -250μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  -0.5 μA V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I
GSS
  ±100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0  -3.0 V I
D
= -250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10) R
DS (ON)
 
0.4
Ω
V
GS
= -10V, I
D
= -0.9A
0.6 V
GS
= -4.5V, I
D
= -0.8A
Forward Transconductance (Notes 10 and 12) g
fs
 1.8  S V
DS
= -15V, I
D
= -0.9A
Diode Forward Voltage (Note 10) V
SD
 -0.85 -0.95 V T
J
= +25°C, I
S
= -0.8A, V
GS
= 0V
Reverse Recovery Time (Note 12) t
rr
 21.1  ns T
J
= +25°C, I
F
= -0.9A,
di/dt = 100A/μs Reverse Recovery Charge (Note 12) Q
rr
 19.3  nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance C
iss
 219 
pF
V
DS
= -30V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 25.7 
Reverse Transfer Capacitance C
rss
 20.5 
Turn-On Delay Time (Note 11) t
D(on)
 1.6 
ns
V
DD
= -30V, I
D
= -1A,
R
G
 6.0Ω V
GS
= -10V
Turn-On Rise Time (Note 11) t
r
 2.2 
Turn-Off Delay Time (Note 11) t
D(off)
 11.2 
Turn-Off Fall Time (Note 11) t
f
 5.7 
Total Gate Charge (Note 11) Q
g
 2.9  nC
V
DS
= -30V, V
GS
= -4.5V,
I
D
= -0.9A
Total Gate Charge (Note 11) Q
g
 5.9 
nC
V
DS
= -30V, V
GS
= -10V,
I
D
= -0.9A
Gate-Source Charge (Note 11) Q
gs
 0.74 
Gate-Drain Charge (Note 11) Q
gd
 1.5 
Notes: 10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing