Diodes ZXMP6A16DN8 - Manual (Page 4)

ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
4 of 8
www.diodes.com
July 2012
© Diodes Incorporated
ZXMP6A16DN8
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
-60 ⎯ ⎯ V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1.0 µA V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I GSS
⎯ ⎯ ±100 nA V GS =
±20V, V
DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(th)
-1.0 ⎯ ⎯ V I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 11) R
DS (ON)
⎯
⎯
85
m Ω
V
GS
= -10V, I
D
= -2.9A
⎯ 125 V
GS
= -4.5V, I
D
= -2.4A
Forward Transconductance (Notes 11 & 12) g
fs
⎯ 7.2 ⎯ S V
DS
= -15V, I
D
= -2.9A
Diode Forward Voltage (Note 11) V
SD
⎯ -0.85 -0.95 V I
S
= -3.4A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 12) t
rr
⎯ 29.2 ⎯ ns I
S
= -2A, di/dt = 100A/µs,
T J = +25°C Reverse recovery charge (Note 12) Q rr
⎯ 39.6 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance C iss
⎯ 1021 ⎯ pF
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
⎯ 83.1 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 56.4 ⎯ pF
Total Gate Charge (Note 13) Q
g
⎯ 12.1 ⎯ nC V
GS
= -5V
V
DS
= -30V,
I
D
= -2.9A
Total Gate Charge (Note 13) Q
g
⎯ 24.2 ⎯ nC
V
GS
= -10V Gate-Source Charge (Note 13) Q
gs
⎯ 2.5 ⎯ nC
Gate-Drain Charge (Note 13) Q
gd
⎯ 3.7 ⎯ nC
Turn-On Delay Time (Note 13) t D(on)
⎯ 3.5 ⎯ ns
V
DD
= -30V, V
GS
= -10V,
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 13) t r
⎯ 4.1 ⎯ ns
Turn-Off Delay Time (Note 13) t
D(off)
⎯ 35 ⎯ ns
Turn-Off Fall Time (Note 13) t
f
⎯ 10 ⎯ ns
Notes: 11. Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.