Diodes ZXMP6A17DN8 - Manual (Page 2)

ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
2 of 8
www.diodes.com
August 2013
© Diodes Incorporated
ZXMP6A17DN8
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
-60 V
Gate-Source voltage V
GS
20 V
Continuous Drain current V
GS
= 10V
(Notes 7 & 9)
I
D
-3.42
A
T A = +70ºC
(Notes 7 & 9)
-2.73
(Notes 6 & 9) -2.7
Pulsed Drain current (Notes 8 & 9) I
DM
-15.6 A
Continuous Source current (Body diode) (Notes 7 & 9) I
S
-3.4 A
Pulsed Source current (Body diode) (Notes 8 & 9) I
SM
-15.6 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Notes 6 & 9)
P
D
1.25
10.0
W
mW/°C
(Notes 6 & 10)
1.81
14.5
(Notes 7 & 9)
2.15
17
Thermal Resistance, Junction to Ambient
(Notes 6 & 9)
R θJA
100
°C/W
(Notes 6 & 10) 70
(Notes 7 & 9) 60
Thermal Resistance, Junction to Lead (Notes 9 & 11) R θJL 51.68
Operating and storage temperature range T J , T STG
-55 to 150 °C
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t  10 sec.
8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point.