Diodes ZXMP6A17E6 - Manual (Page 4)

ZXMP6A17E6
Document Number: DS33589 Rev. 2 - 2
4 of 8
www.diodes.com
December 2010
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A Product Line of
Diodes Incorporated
ZXMP6A17E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
-60 ⎯ ⎯ V I D = -250
μA, V
GS = 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1.0 μA
V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100
nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0 ⎯ -3.0 V I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 7) R
DS (ON)
⎯
0.100 0.125
Ω
V
GS
= -10V, I
D
= -2.3A
0.130 0.190 V GS = -4.5V, I D = -1.9A
Forward Transconductance (Notes 7 & 8) g
fs
⎯ 4.7 ⎯ S V
DS
= -15V, I
D
= -2.3A
Diode Forward Voltage (Note 7) V
SD
⎯ -0.85 -0.95 V I
S
= -2A, V
GS
= 0V
Reverse recovery time (Note 8) t
rr
25.1 ⎯ ns
I
F
= -1.7A, di/dt = 100A/
μs
Reverse recovery charge (Note 8) Q
rr
⎯ 27.2 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C iss
⎯ 637 ⎯ pF
V DS = -30V, V GS = 0V
f = 1MHz
Output Capacitance C
oss
⎯ 70 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 53 ⎯ pF
Total Gate Charge (Note 9) Q
g
⎯ 9.8 ⎯ nC V
GS
= -5.0V
V
DS
= -30V
I
D
= -2.3A
Total Gate Charge (Note 9) Q
g
⎯ 17.7 ⎯ nC
V
GS
= -10V Gate-Source Charge (Note 9) Q
gs
⎯ 1.6 ⎯ nC
Gate-Drain Charge (Note 9) Q
gd
⎯ 4.4 ⎯ nC
Turn-On Delay Time (Note 9) t
D(on)
⎯ 2.6 ⎯ ns
V DD = -30V, V GS = -10V
I D = -1A, R G
≅ 6.0Ω
Turn-On Rise Time (Note 9) t
r
⎯ 3.4 ⎯ ns
Turn-Off Delay Time (Note 9) t
D(off)
⎯ 26.2 ⎯ ns
Turn-Off Fall Time (Note 9) t f
⎯ 11.3 ⎯ ns
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.