Diodes ZXMP6A17G - Manual (Page 4)

ZXMP6A17G
Document Number DS33375 Rev. 6 - 2
4 of 8
www.diodes.com
February 2014
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
ZXMP6A17G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60 ⎯ ⎯ V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -0.5 µA V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0 ⎯ ⎯ V I
D
= -250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9) R
DS(ON)
⎯
0.096 0.125
Ω
V
GS
= -10V, I
D
= -2.2A
0.120 0.190 V
GS
= -4.5V, I
D
= -1.8A
Forward Transconductance (Notes 9 & 10) g
fs
⎯ 4.7 ⎯ S V
DS
= -15V, I
D
= -2.2A
Diode Forward Voltage (Note 9) V
SD
⎯ -0.85 -0.95 V I
S
= -2.0A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 10) t
rr
25.1 ⎯ ns I
S
= -1.7A, di/dt = 100A/µs,
T
J
= +25°C Reverse recovery charge (Note 10) Q
rr
⎯ 27.2 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯ 637 ⎯ pF
V
DS
= -30V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 70.0 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 53.0 ⎯ pF
Total Gate Charge (Note 11) Q
g
⎯ 9.0 ⎯ nC V
GS
= -4.5V
V
DS
= -30V
I
D
= -2.2A
Total Gate Charge (Note 11) Q
g
⎯ 17.7 ⎯ nC
V
GS
= -10V Gate-Source Charge (Note 11) Q
gs
⎯ 1.6 ⎯ nC
Gate-Drain Charge (Note 11) Q
gd
⎯ 4.4 ⎯ nC
Turn-On Delay Time (Note 11) t
D(on)
⎯ 2.6 ⎯ ns
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 11) t
r
⎯ 3.4 ⎯ ns
Turn-Off Delay Time (Note 11) t
D(off)
⎯ 26.2 ⎯ ns
Turn-Off Fall Time (Note 11) t
f
⎯ 11.3 ⎯ ns
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.