Diodes ZXMP6A17K - Manual (Page 2)

ZXMP6A17K
Document Revision: 2
2 of 8
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July 2009
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ZXMP6A17K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
-60 V
Gate-Source voltage V
GS
±20 V
Continuous Drain current V
GS
= 10V
(Note 3)
I
D
6.6
A T
A
=70
°C (Note 3) 5.3
(Note 2) 4.4
Pulsed Drain current V
GS
= 10V (Note 4) I
DM
20.3 A
Continuous Source current (Body diode) (Note 3) I
S
9.3 A
Pulsed Source current (Body diode) (Note 4) I SM
20.3 A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
4.17
33.3
W
mW/
°C
(Note 3)
9.25
74.0
(Note 5)
2.11
16.8
Thermal Resistance, Junction to Ambient
(Note 2)
R θJA
30.0
°C/W
(Note 3) 13.5
(Note 5) 59.1
Thermal Resistance, Junction to Lead (Note 6) R θJL 2.41
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t
≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).