Diodes ZVP0545A - Manual

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 450 Volt V
DS
* R
DS(on)
=150 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-450 V
Continuous Drain Current at T
amb
=25°C I
D
-45 mA
Pulsed Drain Current I
DM
-400 mA
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-450 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -4.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-20
-2
µ A
mA
V
DS
=-450 V, V
GS
=0
V
DS
=-360 V, V
GS
=0V,
T=125°C (2)
On-State Drain Current(1) I
D(on)
-100 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source
On-State Resistance (1)
R
DS(on)
150 Ω V
GS
=-10V,I
D
=-50mA
Forward Transconductance
(1)(2)
g
fs
40 mS V
DS
=-25V,I
D
=-50mA
Input Capacitance (2) C
iss
120 pF
Common Source Output
Capacitance (2)
C
oss
20 pF V
DS
=-25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5 pF
Turn-On Delay Time (2)(3) t
d(on)
10 ns
V
DD
≈ -25V, I
D
=-50mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
15 ns
Fall Time (2)(3) t
f
20 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(
3
E-Line
TO92 Compatible
ZVP0545A
3-413
D
G
S