Diodes ZXMP7A17GQ - Manual (Page 2)

ZXMP7A17GQ
Document Number DS36688 Rev. 2 - 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
ZXMP7A17GQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-70 V
Gate-Source Voltage V
GS
20 V
Continuous Drain Current V
GS
= 10V
(Note 7)
I
D
-3.7
A T
A
= +70°C (Note 7) -2.9
(Note 6) -2.6
Pulsed Drain Current V
GS
= 10V (Note 8) I
DM
-9.6 A
Continuous Source Current (Body Diode) (Note 7) I
S
-4.8 A
Pulsed Source Current (Body Diode) (Note 8) I
SM
-9.6 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
2
16 W
mW/ C
(Note 7)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
62.5
C/W
(Note 7) 34
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
70   V I
D
= -250μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  -1 µA V
DS
= -70V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1   V I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9) R
DS(ON)
 
0.16
Ω
V
GS
= -10V, I
D
= -2.1A
0.25 V
GS
= -4.5V, I
D
= -1.7A
Forward Transconductance (Notes 9 & 10) g
fs
 4.4  S V
DS
= -15V, I
D
= -2.1A
Diode Forward Voltage (Note 9) V
SD
 -0.85 -0.95 V I
S
= -2A, V
GS
= 0V
Reverse Recovery Time (Note 10) t
rr
 29.8  ns
I
S
= -2.1A, di/dt= 100A/µs
Reverse Recovery Charge (Note 10) Q
rr
 38.5  nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
 635  pF
V
DS
= -40V, V
GS
= 0V
f= 1MHz
Output Capacitance C
oss
 52  pF
Reverse Transfer Capacitance C
rss
 42.5  pF
Total Gate Charge (Note 11) Q
g
 9.6  nC V
GS
= -5V
V
DS
= -35V
I
D
= -2.1A
Total Gate Charge (Note 11) Q
g
 18  nC
V
GS
= -10V Gate-Source Charge (Note 11) Q
gs
 1.77  nC
Gate-Drain Charge (Note 11) Q
gd
 3.66  nC
Turn-On Delay Time (Note 11) t
D(on)
 2.5  ns
V
DD
= -35V, V
GS
= -10V
I
D
= -1A, R
G
 6Ω
Turn-On Rise Time (Note 11) t
r
 3.4  ns
Turn-Off Delay Time (Note 11) t
D(off)
 27.9  ns
Turn-Off Fall Time (Note 11) t
f
 8  ns
Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t  5 sec.
8. Same as note (6), except the device is pulsed with D= 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.