Diodes ZVP2120G User Manual
Zvp2120g
SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995
✪
FEATURES
* 200 Volt V
DS
* R
DS(on)
=25
Ω
PARTMARKING DETAIL
ZVP2120
COMPLEMENTARY TYPE ZVN2120G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-200
V
Continuous Drain Current at T
amb
=25°C
I
D
-200
mA
Pulsed Drain Current
I
DM
-1.2
A
Gate Source Voltage
V
GS
±
20
V
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-200
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
-20
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-100
µ
A
µ
A
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V, T=125°C
(2)
On-State Drain Current(1)
I
D(on)
-300
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
25
Ω
V
GS
=-10V, I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V, I
D
=-150mA
Input Capacitance (2)
C
iss
100
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
7
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
≈
-25V, I
D
=-150mA
Rise Time (2)(3)
t
r
15
ns
Turn-Off Delay Time (2)(3)
t
d(off)
12
ns
Fall Time (2)(3)
t
f
15
ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
ZVP2120G
D
D
S
G
3 - 431