Diodes ZVP3310F - Manual

SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995 ✪
FEATURES
* 100 Volt V
DS
* R
DS(on)
=20 Ω
COMPLEMENTARY TYPE - ZVN3310F
PARTMARKING DETAIL - MR
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-100 V
Continuous Drain Current at T
amb
=25°C I
D
75 mA
Pulsed Drain Current I
DM
-1.2 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
-20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-50
µ A
µ A
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
-300 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
20 Ω V
GS
=-10V, I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50 mS V
DS
=-25V, I
D
=-150mA
Input Capacitance (2) C
iss
50 pF
Common Source Output
Capacitance (2)
C
oss
15 pF V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5 pF
Turn-On Delay Time (2)(3) t
d(on)
8 ns
V
DD
≈ -25V, I
D
=-150mA
Rise Time (2)(3) t
r
8 ns
Turn-Off Delay Time (2)(3) t
d(off)
8 ns
Fall Time (2)(3) t
f
8 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
ZVP3310F
D
G
S
TYPICAL CHARACTERISTICS
V
Dr
ai
n S
our
ce
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts)
0
-10
-6
-2
-4
-8
0 -2 -4 -6 -8 -10
I D=
-0.3A
-0.15A
-0.075A
-2 -4 -6 -8 -10
Saturation Characteristics
0
V DS - Drain Source Voltage (Volts)
I
- Dra
in C
urre
nt
(A
m
ps)
-5V
-4V
-0.6
-0.4
-0.2
-10V
-8V
-6V
-9V
-7V
V GS=
-20V
-12V
-16V
-14V
Normalised R DS(on) and V GS(th) v Temperature
T j -Junction Temperature (°C)
N
or
m
al
ised
R
an
d V
-40 -20 0 20 40 60 80 120 100 140 160
I D= -150mA
V GS= -10V
I D= -1mA
V GS= V DS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180
Transconductance v drain current
I D - Drain Current (Amps)
g BI
-Tra
nsco
nd
ucta
nce
(m
S)
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8
0
V DS= -10V
30
20
10
40
80
70
60
50
90
100
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8
0
V DS= -10V
30
20
10
40
80
70
60
50
90
100
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-Ca
pa
ci
ta
nce
(p
F)
C oss
C iss
C rss
0 -20 -40 -60 -80
V GS= 0V
f = 1MHz
0
30
20
10
40
50
0
Q-Charge (nC)
V
/
5
-Ga
te S
ou
rce
Vo
lta
ge
(V
ol
ts
)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V DS =
-25V
I D= -
0.2A
-50V -100V
0.2 0.4 0.6 0.8 1.0 1.2
ZVP3310F
3 - 436 3 - 437