Diodes ZVP4424G - Manual (Page 2)

ZVP4424G ZVP4424G
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-240 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-0.7 -1.4 -2.0 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA V
GS
= ± 40V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-100
µ A
µ A
V
DS
=-240V, V
GS
=0V
V
DS
=-190V, V
GS
=0V, T=125°C
On-State Drain Current I
D(on)
-0.75 -1.0 A V
DS
=-10V, V
GS
=-10V
Static Drain-Source
On-State Resistance
R
DS(on)
7.1
8.8
9
11
Ω
Ω
V
GS
=-10V, I
D
=-200mA
V
GS
=-3.5V, I
D
=-100mA
Forward
Transconductance (1) (2)
g
fs
125 mS V
DS
=-10V,I
D
=-0.2A
Input Capacitance (2) C
iss
100 200 pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Common Source Output
Capacitance (2)
C
oss
18 25 pF
Reverse Transfer
Capacitance (2)
C
rss
5 15 pF
Turn-On Delay Time (2)(3) t
d(on)
8 15 ns
V
DD
≈− 50V, I
D
=-0.25A,
V
GEN
=-10V
Rise Time (2)(3) t
r
8 15 ns
Turn-Off Delay Time (2)(3) t
d(off)
26 40 ns
Fall Time (2)(3) t
f
20 30 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 440 3 - 439
TYPICAL CHARACTERISTICS
0 -2 -4 -6 -8 -10
-1.2
Transfer Characteristics
V DS =-10V
300 µ s Pulsed Test
I
- Drai
n
Cu
rre
nt
(A
m
ps
)
V GS - Gate Source Voltage (Volts)
-0.8
-0.6
-0.4
0
-0.2
-1.0
0 -2 -4 -6 -8 -10
-1.2
Saturation Characteristics
I
- D
rai
n
Curr
en
t (A
m
ps
)
V DS - Drain Source Voltage (Volts)
-0.8
-0.6
-0.4
0
-0.2
-1.0
300 µ s Pulsed Test
V GS =-10V
-5V
-4V
-3V
-2.5V
-2V
Transconductance v drain current
I D - Drain Current (Amps )
g BI
-T
ra
ns
co
ndu
ct
anc
e (
m
S)
300
0 -0.2 -0.4 -0.6 -0.8 -1.0
400
Transconductance v gate-source voltage
V GS -Gate Source Voltage (Volts)
g BI
-T
ra
ns
co
ndu
ct
anc
e (
m
S)
0 -2 -4 -6
300 µ s Pulsed Test
V DS =-10V
300 µ s Pulsed Test
V DS =-10V
Normalised R DS(on) and V GS(th) vs Temperature
Junction Temperature (°C)
No
rm
al
ise
d
R
and V
-50 -25 0 25 50 75 125 100 150
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
On-resistance vs Drain Current
I D- Drain Current (Amps)
R
D
S
(on
)-Dra
in
S
ou
rce
On
Re
si
sta
nc
e
Ω
-2.5V
-3V
V GS= -10V
I D= -1mA
V GS= V DS
-10V
10
1
100
-0.01 -0.1 -10
V GS =-2V
300 µ s Pulsed Test
-1
I D =0.2A
0.2
0.4
0.0
200
100
0
300
400
200
100
0
C rss
C oss
TYPICAL CHARACTERISTICS
0 1 4 5
-6
-8
-10
-14
-16
-12
-4
-2
0
Q-Gate Charge (nC)
200
150
100
0
50
250
300
-0.01 -1 -10 -100
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
C
ap
aci
ta
nce
(p
F)
Note:V GS= 0V
C iss
V
/
5
-G
at
e S
our
ce
V
olt
age (V
olts)
Gate charge v gate-source voltage
V DS = -20V
-50V
-100V
Note:I D=- 0.25A
3 2