Diodes ZVP4424A - Manual (Page 2)

TYPICAL CHARACTERISTICS
0 -2 -4 -6 -8 -10
-1.2
Transfer Characteristics
V DS =-10V
300 µ s Pulsed Test
I D
-
Drain Cur
re
nt
(
Am
ps)
V GS - Gate Source Voltage (Volts)
-0.8
-0.6
-0.4
0
-0.2
-1.0
0 -2 -4 -6 -8 -10
-1.2
Saturation Characteristics
I D
- Drain Curre
n
t (Amps)
V DS - Drain Source Voltage (Volts)
-0.8
-0.6
-0.4
0
-0.2
-1.0
300 µ s Pulsed Test
V GS =-10V
-5V
-4V
-3V
-2.5V
-2V
Transconductance v drain current
I D - Drain Current (Amps )
g fs
-T
ra
n
s
c
o
n
d
ucta
nce (
m
S
)
300
0 -0.2 -0.4 -0.6 -0.8 -1.0
400
Transconductance v gate-source voltage
V GS -Gate Source Voltage (Volts)
g fs
-T
ra
n
s c
o
n
d
ucta
nce
(
m
S
)
0 -2 -4 -6
300 µ s Pulsed Test
V DS =-10V
300 µ s Pulsed Test
V DS =-10V
Normalised R DS(on) and V GS(th) vs Temperature
Junction Temperature (°C)
Normali
s
ed R
D
S(o
n )
a
nd
V
G
S(
th
)
-50 -25 0 25 50 75 125 100 150
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n- So urce
R esi
sta
nc e R DS(
on)
Gate Thres
hold Voltage V
GS(TH)
On-resistance vs Drain Current
I D- Drain Current (Amps)
R
D
S(on
)-
D
ra
in
So
u
rce
O
n
Re
s istan
c
e
(
Ω
)
-2.5V
-3V
V GS= -10V
I D= -1mA
V GS= V DS
-10V
10
1
100
-0.01 -0.1 -10
V GS =-2V
300 µ s Pulsed Test
-1
I D =0.2A
0.2
0.4
0.0
200
100
0
300
400
200
100
0
C rss
C oss
TYPICAL CHARACTERISTICS
0 1 4 5
-6
-8
-10
-14
-16
-12
-4
-2
0
Q-Gate Charge (nC)
200
150
100
0
50
250
300
-0.01 -1 -10 -100
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capa
c
ita
n
ce (
p
F
)
Note:V GS= 0V
C iss
V
GS
-G
a
te S
o
urc
e
V
oltage
(V
olts)
Gate charge v gate-source voltage
V DS = -20V
-50V
-100V
Note:I D=- 0.25A
3 2
0.0001
50
150
100
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 100 1 0.1 0.01
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
Derating Curve
T amb - Ambient Temperature (°C)
P
to
t -Power Dissipation (mW)
0.8
150
0.6
0.4
0.2
0
100 50 0
3-438
ZVP4424A
3-437
ZVP4424A