Diodes ZVP4525G - Manual (Page 4)

ZVP4525G
S E M I C O N D U C T O R S
ISSUE 4 - JUNE 2004
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage V
(BR)DSS
-250 -285 V I
D
=-1mA, V
GS
=0V
Zero gate voltage drain current I
DSS
-30 -500 nA V
DS
=-250V, V
GS
=0V
Gate-body leakage I
GSS
±1 ±100 nA V
GS
= ±40V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-0.8 -1.5 -2.0 V I
D
=-1mA, V
DS
= V
GS
Static drain-source on-state resistance
(1)
R
DS(on)
10
13 14
18 Ω
Ω
V
GS
=-10V, I
D
=-200mA
V
GS
=-3.5V,
I
D
=-100mA
Forward transconductance (3) g
fs
80 200 mS V
DS
=-10V,I
D
=-0.15A
DYNAMIC (3)
Input capacitance C
iss
73 pF
V
DS
=-25 V, V
GS
=0V,
f=1MHz Output capacitance C
oss
12.8 pF
Reverse transfer capacitance C
rss
3.91 pF
SWITCHING (2) (3)
Turn-on delay time t
d(on)
1.53 ns
V
DD
=-30V, I
D
=-200mA
R
G
=50 Ω, V
GS
=-10V
(refer to test circuit)
Rise time t
r
3.78 ns
Turn-off delay time t
d(off)
17.5 ns
Fall time t
f
7.85 ns
Total gate charge Q
g
2.45 3.45 nC
V
DS
=-25V,V
GS
=-10V,
I
D
=-200mA(refer to
test circuit)
Gate-source charge Q
gs
0.22 0.31 nC
Gate drain charge Q
gd
0.45 0.63 nC
SOURCE-DRAIN DIODE
Diode forward voltage (1) V
SD
0.97 V T
j
=25°C, I
S
=-200mA,
V
GS
=0V
Reverse recovery time (3) t
rr
205 290 ns T
j
=25°C, I
F
=-200mA,
di/dt= 100A/ µs
Reverse recovery charge
(3)
Q
rr
21 29 nC
NOTES:
(1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.