Zvp4525g, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZVP4525G User Manual

Page 4

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ZVP4525G

S E M I C O N D U C T O R S

ISSUE 4 - JUNE 2004

4

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-source breakdown voltage

V

(BR)DSS

-250

-285

V

I

D

=-1mA, V

GS

=0V

Zero gate voltage drain current

I

DSS

-30

-500

nA

V

DS

=-250V, V

GS

=0V

Gate-body leakage

I

GSS

±1

±100

nA

V

GS

=

±40V, V

DS

=0V

Gate-source threshold voltage

V

GS(th)

-0.8

-1.5

-2.0

V

I

D

=-1mA, V

DS

= V

GS

Static drain-source on-state resistance

(1)

R

DS(on)

10
13

14
18

V

GS

=-10V, I

D

=-200mA

V

GS

=-3.5V,

I

D

=-100mA

Forward transconductance

(3)

g

fs

80

200

mS

V

DS

=-10V,I

D

=-0.15A

DYNAMIC

(3)

Input capacitance

C

iss

73

pF

V

DS

=-25 V, V

GS

=0V,

f=1MHz

Output capacitance

C

oss

12.8

pF

Reverse transfer capacitance

C

rss

3.91

pF

SWITCHING

(2) (3)

Turn-on delay time

t

d(on)

1.53

ns

V

DD

=-30V, I

D

=-200mA

R

G

=50

Ω, V

GS

=-10V

(refer to test circuit)

Rise time

t

r

3.78

ns

Turn-off delay time

t

d(off)

17.5

ns

Fall time

t

f

7.85

ns

Total gate charge

Q

g

2.45

3.45

nC

V

DS

=-25V,V

GS

=-10V,

I

D

=-200mA(refer to

test circuit)

Gate-source charge

Q

gs

0.22

0.31

nC

Gate drain charge

Q

gd

0.45

0.63

nC

SOURCE-DRAIN DIODE

Diode forward voltage

(1)

V

SD

0.97

V

T

j

=25°C, I

S

=-200mA,

V

GS

=0V

Reverse recovery time

(3)

t

rr

205

290

ns

T

j

=25°C, I

F

=-200mA,

di/dt= 100A/

µs

Reverse recovery charge

(3)

Q

rr

21

29

nC

NOTES:

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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