Diodes ZVP4525E6 - Manual (Page 2)

ISSUE 1 - MARCH 2001
ZVP4525E6
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
-250 V
Gate Source Voltage V
GS
±
40 V
Continuous Drain Current (V
GS
=10V; TA=25°C)(a)
(V
GS
=10V; TA=70°C)(a)
I
D
I
D
-197
-157 mA
mA
Pulsed Drain Current (c) I
DM
-1 A
Continuous Source Current (Body Diode) I
S
-0.75 A
Pulsed Source Current (Body Diode) I
SM
-1 A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
1.1
8.8 W
mW/°C
Operating and Storage Temperature Range T
j
:
T
stg
-55 to +150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
θ JA
113 °C/W
Junction to Ambient (b) R
θ JA
68 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.