Diodes ZVP1320F - Manual (Page 4)

ZVP1320F
Document number: DS33391 Rev. 4 - 2
4 of 8
www.diodes.com
January 2012
© Diodes Incorporated
ZVP1320F
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
-200 - - V V GS = 0V, I D = -1mA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- -
-1
-20
µA
V
DS
= -200V, V
GS
= 0V
V
DS
= -160V, V
GS
= 0V, T
A
= 125°C
Gate-Source Leakage I
GSS
- - ±20 nA V
GS
= ±20V, V
DS
= 0V
On-State Drain Current I D(on)
-100 - - mA V GS = -10V, V DS = -15V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-1.5 - -3.5 V V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance R DS (on)
- - 80 Ω V
GS = -10V, I D = -50mA
Forward Transconductance g
fs
25 - - mS V
DS
= -15V, I
D
= -50mA
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- - 50 pF
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- - 15 pF
Reverse Transfer Capacitance C
rss
- - 5 pF
Turn-On Delay Time t D(on)
- - 8 ns
V DS = -25V, I D = -50mA
Turn-On Rise Time t
r
- - 8 ns
Turn-Off Delay Time t
D(off)
- - 8 ns
Turn-Off Fall Time t f
- - 16 ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.