Diodes ZVP4525Z - Manual (Page 4)

ZVP4525Z
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2007
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -250 -285 V ID=-1mA, VGS=0V
Zero Gate Voltage Drain Current IDSS -30 -500 nA VDS=-250V, VGS=0V
Gate-Body Leakage IGSS ±1 ±100 nA VGS=±40V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -0.8 -1.5 -2.0 V I
D
=-1mA, VDS= VGS
Static Drain-Source On-State Resistance (1) RDS(on) 10
13 14
18 Ω
Ω
VGS=-10V,
ID=-200mA
VGS=-3.5V,
ID=-100mA
Forward Transconductance (3) gfs 80 200 mS VDS=-10V,ID=-0.15A
DYNAMIC (3)
Input Capacitance Ciss 73 pF
VDS=-25 V, VGS=0V,
f=1MHz Output Capacitance Coss 12.8 pF
Reverse Transfer Capacitance Crss 3.91 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.53 ns
VDD =-30V, ID=-200m
A
RG=50Ω, VGS=-10V
(refer to test circuit)
Rise Time tr 3.78 ns
Turn-Off Delay Time td(off) 17.5 ns
Fall Time tf 7.85 ns
Total Gate Charge Qg 2.45 3.45 nC
VDS=-25V,VGS=-10V,
I
D
=-200mA(refer to
test circuit)
Gate-Source Charge Qgs 0.22 0.31 nC
Gate Drain Charge Qgd 0.45 0.63 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.97 V Tj=25°C, IS=-200mA,
VGS=0V
Reverse Recovery Time (3) trr 205 290 ns Tj=25°C, IF=-200mA,
di/dt=100A/ μs
Reverse Recovery Charge (3) Qrr 21 29 nC
(1) Measured under pulsed conditions. Width=300 μs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.