Diodes ZXMP10A13F - Manual (Page 4)

ZXMP10A13F
Document number: DS33596 Rev. 3 - 2
4 of 8
www.diodes.com
October 2013
© Diodes Incorporated
ZXMP10A13F
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-100   V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  -1.0 µA V
DS
= -100V, V
GS
= 0V
Gate-Source Leakage I
GSS
  ±100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-2.0  -4.0 V I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9) R
DS (on)
 
1.0
Ω
V
GS
= -10V, I
D
= -0.6A
1.45 V
GS
= -6.0V, I
D
= -0.5A
Forward Transconductance (Notes 9 and 11) g
fs
 1.2  S V
DS
= -15V, I
D
= -0.6A
Diode Forward Voltage (Note 9) V
SD
 -0.85 -0.95 V T
J
= 25°C, I
S
= -0.75A, V
GS
= 0V
Reverse Recovery Time (Note 11) t
rr
 29  ns T
J
= 25°C, I
F
= -0.9A,
di/dt = 100A/ s Reverse Recovery Charge (Note 11) Q
rr
 31  nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
 141 
pF
V
DS
= -50V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 13.1 
Reverse Transfer Capacitance C
rss
 10.8 
Turn-On Delay Time (Note 10) t
D(on)
 1.6 
ns
V
DD
= -50V, I
D
= -1.0A,
R
G
 6.0 V
GS
= -10V
Turn-On Rise Time (Note 10) t
r
 2.1 
Turn-Off Delay Time (Note 10) t
D(off)
 5.9 
Turn-Off Fall Time (Note 10) t
f
 3.3 
Total Gate Charge (Note 10) Q
g
 1.8  nC
V
DS
= -50V, V
GS
= -5.0V,
I
D
= -0.6A
Total Gate Charge (Note 10) Q
g
 3.5 
nC
V
DS
= -50V, V
GS
= -10V,
I
D
= -0.6A
Gate-Source Charge (Note 10) Q
gs
 0.6 
Gate-Drain Charge (Note 10) Q
gd
 1.6 
Notes: 9. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.