Diodes ZXMP10A17E6Q - Manual (Page 2)

ZXMP10A17E6Q
Document Number DS36689 Rev. 2 - 2
2 of 7
www.diodes.com
December 2013
© Diodes Incorporated
ZXMP10A17E6Q
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-100 V
Gate-Source Voltage V
GS
20 V
Continuous Drain Current V
GS
= 10V
(Note 7)
I
D
-1.6
A T
A
= +70°C (Note 7) -1.3
(Note 6) -1.3
Pulsed Drain Current V
GS
= 10V (Note 8) I
DM
-7.7 A
Continuous Source Current (Body diode) (Note 7) I
S
-2.1 A
Pulsed Source Current (Body diode) (Note 8) I
SM
-7.7 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 6)
P
D
1.1
8.8
W
mW/°C
(Note 7)
1.7
13.7
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
113
°C/W
(Note 7) 73
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-100   V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  -0.5 µA V
DS
= -100V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-2.0  -4.0 V I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9) R
DS(ON)
 
0.350
Ω
V
GS
= -10V, I
D
= -1.4A
0.450 V
GS
= -6V, I
D
= -1.2A
Forward Transconductance (Notes 9 & 10) g
fs
 2.8  S V
DS
= -15V, I
D
= -1.4A
Diode Forward Voltage (Note 9) V
SD
 -0.85 -0.95 V I
S
= -1.7A, V
GS
= 0V
Reverse recovery time (Note 10) t
rr
 33  ns
I
S
= -1.5A, di/dt = 100A/µs
Reverse recovery charge (Note 10) Q
rr
 48  nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
 424  pF
V
DS
= -50V, V
GS
= 0V
F = 1MHz
Output Capacitance C
oss
 36.6  pF
Reverse Transfer Capacitance C
rss
 29.8  pF
Total Gate Charge (Note 11) Q
g
 7.1  nC V
GS
= -6V
V
DS
= -50V
I
D
= -1.4A
Total Gate Charge (Note 11) Q
g
 10.7  nC
V
GS
= -10V Gate-Source Charge (Note 11) Q
gs
 1.7  nC
Gate-Drain Charge (Note 11) Q
gd
 3.8  nC
Turn-On Delay Time (Note 11) t
D(on)
 3  ns
V
DD
= -50V, V
GS
= -10V
I
D
= -1A, R
G
 6.0Ω
Turn-On Rise Time (Note 11) t
r
 3.5  ns
Turn-Off Delay Time (Note 11) t
D(off)
 13.4  ns
Turn-Off Fall Time (Note 11) t
f
 7.2  ns
Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t  5 sec.
8. Same as note (6), except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.