Diodes ZXMP2120FF - Manual (Page 4)

ZXMP2120FF
Issue 1 - January 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
-200 V I
D
= 1mA, V
GS
=0V
Zero gate voltage drain current I
DSS
-10
␮A V
DS
= -200V, V
GS
=0V
-100
␮A V
DS
= -160V, V
GS
=0V, T=125C (‡)
Gate-body leakage I
GSS
20 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-1.5 -3.5 V I
D
= 250
␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
R
DS(on)
28
⍀
V
GS
= -10V, I
D
= -150mA
On-state drain current (*) I
D(on)
-300 mA V
DS
= -25V, V
GS
=-10V
Forward transconductance (*) (‡) g
fs
50 mS V
DS
= -25V, I
D
= -150mA
Dynamic (‡)
Input capacitance C
iss
100 pF V
DS
= -25V, V
GS
=0V
f=1MHz
Output capacitance C
oss
25 pF
Reverse transfer capacitance C
rss
7 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
7 ns V
DD
= -25V, V
GS
= -10V
I
D
= -150mA
R
SOURCE
≈
50
⍀
Rise time t
r
15 ns
Turn-off delay time t
d(off)
12 ns
Fall time t
f
15 ns