Diodes ZXMP2120G4 - Manual

SUMMARY
V
(BR)DSS
=-200V; R
DS(ON)
= 25 ; I
D
= 200mA
DESCRIPTION
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of telecom and general high voltage circuits.
A SOT23-5 version is also available (ZXMP2120E5).
FEATURES
•
High voltage
•
Low on-resistance
•
Fast switching speed
•
Low gate drive
•
Low threshold
•
SOT223 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
•
Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXMP2120G4TA 7 12mm embossed 1,000 units
ZXMP2120G4TC 13 12mm embossed 4,000 units
DEVICE MARKING
ZXMP
2120
ZXMP2120G4
ISSUE 2 - SEPTEMBER 2006
200V P-CHANNEL ENHANCEMENT MODE MOSFET
1
D
S
N/C
Pinout - top view
G
SOT223