Diodes ZXMC3A16DN8 - Manual

SUMMARY
N-Channel V
(BR)DSS
= 30V; R
DS(ON)
= 0.035 ; I
D
= 6.4A
P-Channel V
(BR)DSS
= -30V; R
DS(ON)
= 0.048 ; I
D
= -5.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
Motor Drive
•
LCD backlighting
DEVICE MARKING
ZXMC
3A16
ZXMC3A16DN8
ISSUE 1 - OCTOBER 2005
1
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
DEVICE REEL TAPE
WIDTH
QUANTITY
PER REEL
ZXMC3A16DN8TA 7 ’‘ 12mm 500 units
ZXMC3A16DN8TC 13’‘ 12mm 2500 units
ORDERING INFORMATION
Q2 = P-CHANNEL Q1 = N-CHANNEL
SO8
Top view
PINOUT