Diodes ZXMC10A816N8 - Manual (Page 9)

ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
9 of 11
www.diodes.com
March 2013
© Diodes Incorporated
ZXMC10A816N8
Typical Characteristics Q2 P-Channel
(cont.)
0.1 1 10 100
0
200
400
600
800
1000
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C
Capac
ita
nc
e
(
pF)
-V
DS
- Drain - Source Voltage (V)
0 2 4 6 8 10 12 14 16 18
0
2
4
6
8
10
I
D
= -2.1A
V
DS
= -50V
Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage
Q - Charge (nC) -V
GS
G
ate
-S
o
urc
e Vol
ta
ge (V)
Test Circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k 0.2 ␮F 12V Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
d(off)
V
DS
V
DD
R
D
R
G
Pulse width Ͻ 1␮S
Duty factor 0.1%
V
DS
I
D
I
G