Diodes ZXMC6A09DN8 - Manual

SUMMARY
N-Channel V
(BR)DSS
= 60V; R
DS(ON)
= 0.045 ; I
D
= 5.1A
P-Channel V
(BR)DSS
= -60V; R
DS(ON)
= 0.055 ; I
D
= -4.8A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
Motor drive
•
LCD backlighting
DEVICE MARKING
ZXMC
6A09
ZXMC6A09DN8
ISSUE 4 - MAY 2005
1
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
DEVICE REEL TAPE
WIDTH
QUANTITY
PER REEL
ZXMC6A09DN8TA 7 ’‘ 12mm 500 units
ZXMC6A09DN8TC 13’‘ 12mm 2500 units
ORDERING INFORMATION
Q2 = P-CHANNEL Q1 = N-CHANNEL
SO8
Top view
PINOUT