Diodes ZXMS6003G - Manual (Page 4)

ZXMS6003G
Issue 2 - March 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For I
D(LIM)
< 1.2A (see safe operating area curve).
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(c) For a device surface mounted on FR4 board and measured at t<=10s.
Parameter Symbol Limit Unit
Continuous drain-source voltage V
DS
60 V
Drain-source voltage for short circuit protection V
IN
=5V (a) V
DS(SC)
36 V
Drain-source voltage for short circuit protection V
IN
=10V (a) V
DS(SC)
20 V
Continuous input voltage V
IN
-0.2 ... +10 V
Peak input voltage V
IN
-0.2 ... +20 V
Operating temperature range T
j
, -40 to +150 °C
Storage temperature range T
stg
-55 to +150 °C
Power dissipation @ T
amb
=25°C (a) P
D
2.5 W
Continuous drain current @ V
IN
=10V; T
amb
=25°C (b) I
D
1.6 A
Continuous drain current @ V
IN
=5V; T
amb
=25°C (b) I
D
1.4 A
Continuous source current (body diode) (b) I
S
3 A
Pulsed source current (body diode) (c) I
S
8 A
Unclamped single pulse inductive energy E
AS
550 mJ
Load dump protection V
LoadDump
80 V
Electrostatic discharge (human body model) V
ESD
4000 V
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 40/150/56
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient R
⍜JA
50 °C/W
Junction to ambient R ⍜JA 28 °C/W