Diodes T5V0DLP - Manual (Page 2)

T5V0DLP
Document number: DS31906 Rev. 3 - 2
2 of 4
www.diodes.com
March 2014
© Diodes Incorporated
T5V0DLP
ADVAN
CE I
N
F
O
RM
ATI
O
N
Thermal Characteristics
Characteristic Symbol Value Unit
Peak Pulse Power (tp = 8x20µs) (Note 5) T
A
= +25°C P
pk
25 W
Power dissipation (Note 5) T
A
= +25°C P
D
385 mW
Thermal Resistance, Junction to Ambient (Note 5) T
A
= +25°C R
θJA
325 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Reverse
Standoff
Voltage
Breakdown
Voltage
V
BR
@ I
T
Test
Current
Max. Reverse
Leakage @ V
RWM
(Note 6)
Max. Clamping Voltage
V
C
@ I
PP
(Note 7)
Max Total
Capacitance C
T
(Note 8) V
R
= 0V
Typical Total
Capacitance C
T
(Note 8) V
R
= 3.3V
V
RWM
(V) Min (V) Max (V) I
T
(mA) I
R
(µA) V
C
(V) I
PP
(A) (pF) (pF)
5 6.1 8 1.0 0.25 12.5 2 9 4.5
Notes: 5. Device mounted on FR-4 PC board with suggested pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (I
pp
) waveform.
8. f = 1MHz
0 20 40 60
100
50
0
I
, PE
AK P
U
LS
E
CURREN
T
(
%
I
)
pp
pp Peak Value I
pp
Half Value I /2
pp
8x20 Waveform
as defined by R.E.A.
t, TIME ( s) 
Figure 1 Pulse Waveform
V , REVERSE VOLTAGE (V)
Figure 2 Total Capacitance
R
C
, T
O
TAL
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
0
2
4
6
8
10
0 1 2 3 4 5 6
f = 1MHz
0.001
0.01
0.1
1
10
100
1000
10000
100 300 500 700 900 1100 1300
Figure 3 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
I
, I
N
ST
ANT
A
NE
OUS F
O
RW
ARD
CUR
RENT
(
m
A
)
F
T = -55°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
T = 25°C
A
0.1
1
10
100
1000
0 1 2 3 4 5 6 7 8
I
, L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
R
V , REVERSE VOLTAGE (V)
R
Figure 4 Typical Reverse Characteristics
T = -55°C
A
T = 150°C
A
T = 85°C
A
T = 25°C
A