Zxld1322 – Diodes ZXLD1322 User Manual
Page 6
ZXLD1322
ZXLD1322
Document number: DS32166 Rev. 3 - 2
6 of 17
April 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Switching NPN Transistor
Symbol Parameter Condition
Min.
Typ.
Max.
Unit
I
SW
Average continuous switch current
(c)
2
A
I
BON(max)
Maximum base current into switch
transistor from internal drive circuit
(d)
2V<V
IN
<18V BIAS pin at 0V
30 50 70 mA
I
BON
Base current into switch transistor
using external resistor (R
BASE
) from
BIAS pin to ground
R
BIAS
= 1680
Ω
10 mA
V
(BR)CE
Collector-Emitter breakdown voltage
I
C
= 10mA
15 V
V
CE(sat)
Collector-Emitter saturation voltage
I
C
= 0.1A, I
B
= 10mA
I
C
= 2A, I
B
= 50mA
(e)
50
120
mV
h
FE
Static forward current transfer ratio
I
C
= 200mA, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
209
116
C
OBO
Output capacitance
V
CB
= 10V,f = 1MHz
64 pF
t(on) Turn-on
time
Ic = 0 to I
C
= 2A V
IN
= 10V
30 ns
t(off) Turn-off
time
I
C
= 2A to Ic < 100
μA
28 ns
High-Side Current Monitor
Symbol Parameter Condition
Min.
Typ.
Max.
Unit
V
M_VIN
Supply voltage
2.5
18
V
V
MON
Sense voltage
=V
(VIN)
– V
M_VIN
0 100
200 mV
I_
M_VIN
Input current
Measured into M_VIN pin
0.08
1
µA
TCO
(MON)
Temperature coefficient
V
MON
=10mV
V
MON
=100mV
370
150
ppm/K
BW Bandwidth
V
MON
=10mV
V
MON
=100mV
350
2.5
KHz
Mhz
Gm
Tran conductance
ΔI
OUT
/
ΔVMON
1
mA/V
A
CC
Accuracy
R
M
= 0.1
Ω
V
MON
= 100mV
-3 3 %
Reference Current Monitor
Symbol Parameter Condition
Min.
Typ.
Max.
Unit
V
ADJ
Adjust
Voltage
0 500 mV
TCO
(MON)
Temperature coefficient
V
ADJ
= 50mV
V
ADJ
= 500mV
160
200
ppm/K
BW Bandwidth
V
ADJ
= 50mV
V
ADJ
= 500mV
275
3
KHz
Mhz
Gm
Tran conductance
ΔI
OUT
/
ΔV
ADJ
200 µA/V
A
CC
Accuracy
V
ADJ
= 500mV
-3 3 %
Notes:
(c) Measured under pulse conditions.
(d) This current is measured via the collectors and emitters of the switch with these connected to ground (0V)
(e) Measured under pulse conditions. Peak Current = I
C