Diodes ZXLD1370 - Manual (Page 4)

ZXLD1370
Document number: DS32165 Rev. 5 - 2
4 of 39
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September 2012
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ZXLD1370
A Product Line of
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Absolute Maximum Ratings
(Note 5) (Voltages to GND, unless otherwise specified.)
Symbol Parameter Rating Unit
V
IN
Input Supply Voltage Relative to GND -0.3 to +65 V
V
AUX
Auxiliary Supply Voltage Relative to GND -0.3 to +65 V
V
ISM
Current Monitor Input Relative to GND -0.3 to +65 V
V
SENSE
Current Monitor Sense Voltage (V
IN
-V
ISM
) -0.3 to +5 V
V
GATE
Gate Driver Output Voltage -0.3 to +20 V
I
GATE
Gate Driver Continuous Output Current 18 mA
V
FLAG
Flag Output Voltage -0.3 to 40 V
V
PWM
, V
ADJ
,
V
TADJ
, V
GI
Other Input Pins -0.3 to +5.5 V
T
J
Maximum Junction Temperature 150 °C
T
ST
Storage Temperature -55 to +150 °C
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional
operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to
absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and
transporting these devices.
Package Thermal Data
Thermal Resistance Package Typical Unit
Junction-to-Ambient, θ
JA
(Note 6) TSSOP-16EP 50 °C/W
Junction-to-Case, θ
JC
TSSOP-16EP 23 °C/W
Notes: 5. For correct operation SGND and PGND should always be connected together.
6. Measured on High Effective Thermal Conductivity Test Board" according JESD51.