Diodes ZXBM1004 - Manual (Page 2)

ZXBM1004
S E M I C O N D U C T O R S
ISSUE 6 - MAY 2007
2
PARAMETER SYMBOL LIMITS UNIT
Supply voltage V
CCmax
-0.6 to 20 V
Input current I
CCmax
200 mA
Input voltage V
IN
max -0.5 to V
CC
+0.5 V
Output voltage V
OUT
max -0.5 to V
CC
+0.5 V
Power dissipation P
Dmax
500 mW
Operating temp. T
OPR
-40 to 110 ЊC
Storage temp. T
STG
-55 to 150 ЊC
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
1) Maximum allowable Power Dissipation, P
D
,
is shown plotted against Ambient Temperature,
T
A
, in the accompanying Power Derating Curve,
indicating the Safe Operating Area for the device.
2) Power consumed by the device, P
T
, can be
calculated from the equation:
P
T
= P
Q
+ P
PhHi
+ P
PhLo
where P
Q
is power dissipated under quiescent
current conditions, given by:
P
Q
= Vcc x Icc
where Vcc is the application
device Supply Voltage
and Icc is the maximum Supply
Current given in the Electrical
Characteristics
and P
PhHi
is power generated due to either one of
the phase outputs Ph1Hi or Ph2Hi being
active, given by:
P
PhHi
= I
OL
x V
OL
where I
OL
is the application Ph1Hi and Ph2Hi
output currents
and V
OL
is the maximum Low Level
Output Voltage for the Ph1Hi and
Ph2Hi outputs given in the Electrical
Characteristics
and P
PhLo
is power generated due to either one of
the phase outputs Ph1Lo or Ph2Lo being
active, given by:
P
PhLo
= I
OH
x (V
CC
- V
OH
)
where I
OH
is the application Ph1Lo and Ph2Lo
output currents
and Vcc is the application device Supply
Voltage
and V
OH
is the minimum High Level
Output Voltage for the Ph1Lo and
Ph2Lo outputs given in the Electrical
Characteristics