Diodes ZXCT1082/83/84/85/86/87 - Manual (Page 3)

ZXCT1082/83/84/85/86/87
ZXCT1082/83/84/85/86/87
Document number: DS32162 Rev. 2 - 2
3 of 13
www.diodes.com
June 2011
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Diodes Incorporated
Electrical Characteristics
Test Conditions T
A
= 25
°C, V
S+
= 12V, V
CC
= 5 V, V
SENSE
1 = 100mV, ZXCT1082/3 R
GT
= 5k Ω, R
G
= 125k Ω; unless otherwise stated.
(FT = -40°C to +125°C)
Symbol Parameter Conditions Min. Typ. Max. Units
Input
I
S+
S+ input current
V
SENSE
= 0mV (Note 1)
1.7
µA
T
A
= FT 5
I
S-
S- input current
1.7
µA
T
A
= FT 5
V
IO
Input Offset Voltage
(Note 2)
V
SENSE
= 0mV ±0.2 ±1
mV ZXCT1082/3/4/5 T
A
= FT ±2.5
ZXCT1086/87 T
A
= FT ±3
Temperature co-efficient ±4 µV/K
Output
G
T
Transconductance
ZXCT1082/3
V
SENSE
= 10mV to 150mV
(Note 1, 3)
200 µA/V
G
T-ERR
Transconductance error
(Note 4)
-1 +1
%
T
A
= FT -2 +2
G
T-TC
Transconductance
temperature co-efficient
T
A
= FT 10 nA/K
Z
OUT
Output impedance ZXCT1082/3 1¦¦5 G Ω¦¦pF
G
V
Gain
ZXCT1084/5/6/7
V
SENSE
= 10mV to 150mV
(Note 1)
1084/5 25
V/V
1086/7 50
G
V-ERR
Gain error (Note 4)
-1 +1
%
T
A
= FT -2 +2
G
V-TC
Voltage gain temperature
co-efficient
T
A
= FT 100 ppm/K
Z
OUT
Output impedance ZXCT1084/5/6/7 125 k Ω
V
OUTH
Output relative to common
mode, V
S-
ZXCT1082/3 V
LOAD
- 1
V
LOAD
- 0.8 V
ZXCT1084/5/6/7 V
S-
- 1 V
S-
- 0.8
Notes: 1. For the ZXCT1082/83 V SENSE = “V SUPPLY ” – “V LOAD “ where V LOAD is the load voltage or the lower potential side of the sense resistor.
For the ZXCT1083/84/85/86 V SENSE = “V S+ ” – “V S- “
2. V IO is extrapolated from measurements for the gain-error test.
3. For V SENSE > 10mV, the internal voltage-current converter is fully linear. This enables a true offset to be defined and used.
4. Gain or transconductance error is calculated by applying two values of V SENSE and calculating the error of the slope vs. the ideal.