Diodes TL082 - Manual (Page 4)

TL082
GENERAL PURPOSE JFET INPUT OPERATIONAL
AMPLIFIERS
TL082 Rev. 1 4 of 11 JULY 2009
www.diodes.com © Diodes Incorporated
Electrical Characteristics
(V
CC±
= ±15V, T
A
= 25
o
C; unless otherwise noted)
Symbol Parameter Test Conditions Min Typ. Max Unit
V
IO
Input Offset Voltage
V
O
=0,
R
S
=50 Ω
T
A
=25 o C 3 6
mV
T
A
= full range 9
α
v
IO
Temperature Coefficient
of Input Offset Voltage
V
O
=0, R
S
=50 Ω, T
A
= full range 18 μV/ o
C
I
IO
Input Offset Current V
O
=0
T
A
=25
o
C 5 100 pA
T
A
= full range 10 nA
I
IB
Input Bias Current V
O
=0
T
A
=25 o C 30 200 pA
T
A
= full range 20 nA
V
ICR
Common Mode
Input Voltage Range
±11 -12~+15 V
V
OM
Maximum Peak
Output Voltage Swing
R
L
=10k Ω, T
A
=25 o C ±12 ±13.5
V R
L
≧10k Ω,
T
A
= full range
±12
R
L
≧2k Ω ±10 ±12
A
VD
Large Signal Differential
Voltage Amplification V
O
=±10V,
R
L
≧2k Ω
T
A
=25
o
C 50 200
V/mV
T
A
= full range 25
B
1
Unity Gain Bandwidth 3 MHz
r
i
Input Resistance T
A
=25
o
C 10
12 Ω
CMRR
Common Mode
Rejection Ratio V
IC
=V
ICRmin
, V
O
=0
R
S
=50 Ω, T
A
=25 o C
75 86 dB
k
SVR
Supply Voltage
Rejection Ratio
(
ΔV
CC
±/ ΔV
IO
)
V
CC
=±9 to ±15V
V
O
=0
R
S
=50 Ω, T
A
=25
o
C
80 86 dB
I
CC
Supply Current
(each amplifier) V
O
=0, T
A
=25 o C
No load
1.4 2.8 mA
V
O1
/V
O2
Crosstalk Attenuation A
VD
=100, T
A
=25
o
C 120 dB
SR Slew Rate at Unity Gain
V
I
=10V, C
L
=100pF,
R
L
=2k Ω
(See Figure 1)
T
A
=25
o
C 8 13
V/ μs
T
A
= full range 5
tr Rise Time V
I
=20mV, R
L
=2k Ω, C
L
=100pF
(See Figure 1)
0.05 μs
Overshoot Factor 20 %
Vn
Equivalent Input Noise
Voltage
R
S
=20 Ω
f=1kHz 18 ΗΖ nV
f=10 Hz to 10kHz 4 μV
In
Equivalent Input Noise
Current
R
S
=20 Ω, f=1kHz 0.01 HZ pA
THD
Total Harmonic
Distortion
V
Irms
=6V, A
VD
=1,
R
L
≧2k Ω, R
S
≦1k Ω,
f=1kHz
0.003 %
θ
JA
Thermal Resistance
Junction-to-Ambient
SOP-8L (Note 9) 145
o
C/W
θ
JC
Thermal Resistance
Junction-to-Case
SOP-8L (Note 9) 35 o C/W
Notes: 9. Test condition for SOP-8L: Devices mounted on FR-4 substrate PC board, with minimum recommended pad layout.