Zxre330, Electrical characteristics – Diodes ZXRE330 User Manual
Page 3
ZXRE330
Document number: DS36772 Rev. 2 - 2
3 of 8
www.diodes.com
January 2014
© Diodes Incorporated
ZXRE330
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter
Conditions
Typ. E
Limits Units
T
AMB
V
REF
Reverse breakdown voltage
I
R
= 100μA
+25°C 3.3
— V
Reverse breakdown voltage tolerance
I
R
= 100μA
+25°C
ZXRE330A
—
±16.5
mV
ZXRE330E ±66
-40 to +85°C
±99
I
ROFF
Off state reverse current
V = V
REF
*0.9
+25°C 0.5
—
µA
-40 to +85°C
—
1
∆V
R
/∆T
Average reverse breakdown voltage
temperature coefficient
I
R
= 5mA
-40 to +85°C
±20 — —
I
R
= 100µA
±15 ±150
ppm/°C
I
R
= 10µA
±15 — —
∆V
R
Reverse breakdown
change with current
2uA <I
R
< 100uA
25°C 0.2
—
mV
-40 to +85°C
—
0.6
100uA < I
R
< 5mA
25°C 10
—
-40 to +85°C
—
20
I
RMIN
Minimal Operating Current
—
1
2
µA
Z
R
Dynamic output impedance
I
R
= 2mA, f = 120Hz, I
AC
= 0.1I
R
2 — Ω
e
n
Noise voltage
I
R
= 100µA
10Hz < f < 10kHz
55 —
µV
RMS
V
R
Long term stability (non cumulative)
t = 1000Hrs, I
R
= 100µA
—
—
ppm
V
HYST
Thermal hysteresis
∆T = -40°C to +85°C
0.08
—
%