Diodes ZXRE4041 - Manual (Page 2)

ZXRE4041
ZXRE4041
Document number: DS32169 Rev. 6 - 2
2 of 5
www.diodes.com
May 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings
(Voltages to GND Unless Otherwise Stated)
Parameter Symbol Rating Unit
Reverse Current V
Z
30 mA
Forward Current 10 mA
Operating Temperature T
OMP
-40 to 125 °C
Storage Temperature T
STG
-55 to 125 °C
Power Dissipation (T
AMB
= 25°C) P
D
330 mW
Electrical Characteristics
(Test conditions: Tamb = 25°C, unless otherwise specified.)
Symbol Parameter Condition Min. Typ. Max. Tol. (%) Unit
V
R
Reverse breakdown voltage I
R
= 100µA
1.219
1.213 1.225
1.225 1.231
1.237 C/0.5
D/1
V
I
MIN
Minimum operating current 30 µA
I
R
Recommended operating current 0.03 12 mA
T
C
(*)
Average reverse breakdown
voltage temperature coefficient
I
R(min)
to I
R(max)
20 100 ppm/°C
R
S
(†)
Reverse Breakdown Change
with Current Voltage I
R
= 30
μA to 1μA
I
R
= 1mA to 12mA
1
10
mV
Z
R
Reverse dynamic impedance
I
R
= 1mA
f = 100Hz
I
AC
= 0.1I
R
0.2 0.6 Ω
E
N
Wideband noise voltage
I
R
= 8µA to 100µA
f = 10Hz to 10kHz
60 µV(rms)
Notes:
Note: V
R(MAX)
- V
R(MIN)
is the maximum deviation in reference
voltage measured over the full operating temperature range.
(*)
T
C
=
(V
R(MAX)
– V
R(MIN)
) x 1000000
V
R
x (T
(MAX)
– T
(MIN)
)
(†)
R S =
ΔV
R
ΔI
R