Diodes BAS70LP - Manual (Page 2)

BAS70LP
Document number: DS35105 Rev. 2 - 2
2 of 4
www.diodes.com
March 2011
© Diodes Incorporated
BAS70LP
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V RRM
V
RWM
V
R
70 V
Forward Continuous Current (Note 4) I
FM
70 mA
Non-Repetitive Peak Forward Surge Current @ t p
< 1.0s
I FSM
800 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P D
430 mW
Thermal Resistance Junction to Ambient Air (Note 4) R θJA 295 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(BR)R
70 - - V I
R
= 10 μA
Forward Voltage V
F
-
-
-
-
-
- 0.42
0.75
0.96
V
I F = 1.0mA, T J = 25*C
I
F
= 10mA, T
J
= 25*C
I
F
= 15mA, T
J
= 25*C
Leakage Current (Note 5) I
R
-
-
-
-
0.1
10
μA
V
R
= 50V, T
J
= 25*C
V
R
= 70V, T
J
= 25*C
Total Capacitance C
T
- 1 - pF V
R
= 0V, f = 1.0MHz
Reverse Recovery Time t
rr
- 1.6 - ns
I
F
= I
R
= 10mA to IR = 1.0mA,
I
rr
= 0.1 x I
R
, R
L
= 100 Ω
Notes: 4. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
0.1
0.2
0.3
0.4
0.5
0 0.1 0.2 0.3 0.4 0.5
Fig. 1 Forward Power Dissipation
I , AVERAGE FORWARD CURRENT (A)
F(AV)
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
W
)
D
0.01
0.1
1
10
100
0 0.5 1.0 1.5 2.0
Fig. 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I
, INS
T
A
N
T
A
NEOUS
F
O
R
W
ARD CURR
ENT
(
m
A)
F
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A