Diodes BAS40/ -04/ -05/ -06 - Manual (Page 2)

BAS40/ -04/ -05/ -06
Document number: DS11006 Rev. 25 - 2
2 of 5
www.diodes.com
December 2013
© Diodes Incorporated
BAS40/ -04/ -05/ -06
Marking Information
Date Code Key
Year 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code K L M N P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage 
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Forward Continuous Current (Note 6) I
FM
200 mA
Forward Surge Current (Note 6) @ t < 1.0s I
FSM
600 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P
D
350 mW
Thermal Resistance, Junction to Ambient Air (Note 6) R
JA
357 °C/W
Operating Temperature Range T
J
-55 to +125 °C
Storage Temperature Range T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V
(BR)R
40   V I
R
= 10µA
Forward Voltage
V
F
 
380
1000
mV
t
p
< 300µs, I
F
= 1.0mA 
t
p
< 300µs, I
F
= 40mA
Reverse Leakage Current (Note 7) I
R
 20 200 nA t
p
< 300µs, V
R
= 30V
Total Capacitance C
T
 4.0 5.0 pF V
R
= 0V, f =1.0MHz
Reverse Recovery Time t
rr
  5.0 ns
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
= 100Ω
Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
xxx = Product Type Marking Code
K43 = BAS40
K44 = BAS40-04
K45 = BAS40-05
K46 = BAS40-06
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site Shanghai A/T Site