Diodes BAS40TW /DW-04 /DW-05 /DW-06 /BRW User Manual
Features, Mechanical data, Maximum ratings
BAS40TW /DW-04
/DW-05 /DW-06 /BR
BAS40TW /DW-04
/DW-05 /DW-06 /BRW
Document number: DS30156 Rev. 13 - 2
1 of 4
www.diodes.com
July 2008
© Diodes Incorporated
W
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Features
•
Low Forward Voltage Drop
•
Fast Switching
•
Ultra-Small Surface Mount Package
•
PN Junction Guard Ring for Transient and ESD Protection
•
Lead Free/RoHS Compliant (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
•
"Green" Device (Notes 4 and 5)
Mechanical Data
•
Case: SOT-363
•
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
•
Polarity: See Diagrams Below
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.006 grams (approximate)
C
1
A
3
C
2
A
1
C
3
A
2
AC
1
AC
2
C
2
A
1
A
2
C
1
C
1
C
2
A
2
A
1
A
2
A
1
A
1
A
2
C
2
C
1
C
2
C
1
AC
1
AC
2
C
1
A
1
C
2
A
2
Top View
BAS40TW
BAS40DW-04
BAS40DW-05
BAS40DW-06
BAS40BRW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
RMS Reverse Voltage
V
R(RMS)
28
V
Forward Continuous Current (Note 1)
I
FM
200
mA
Non-Repetitive Peak Forward Surge Current
@ t < 1.0s
I
FSM
600
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
P
D
200
mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
θJA
625
°C/W
Operating Temperature Range
T
J
-55 to +125
°C
Storage Temperature Range
T
STG
-65 to +125
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
40
⎯
V
I
R
= 10
μA
Forward Voltage
V
F
⎯
380
1000
mV
mV
I
F
= 1.0mA, t
p
< 300
μs
I
F
= 40mA, t
p
< 300
μs
Reverse Current (Note 2)
I
R
⎯
200
nA
V
R
= 30V
Total Capacitance
C
T
⎯
5.0
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
5.0
ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants