Diodes BAT54 SERIES SOT23 - Manual

SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– SEPTEMBER 1995 ✪
FEATURES : Low V
F
& High Current Capability
APPLICATIONS : PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
R
30 V
Forward Current I
F
200 mA
Forward Voltage @ I
F
=10mA V
F
400 mV
Repetitive Peak Forward Current I
FRM
300 mA
Non Repetitive Forward Current t<1s I
FSM
600 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Storage Temperature Range T
stg
-55 to +150 °C
JunctionTemperature ¤ T
j
125 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
30 50 V I
R
=10 µ A
Forward Voltage V
F
135
200
280
350
530
240
320
400
500
1000
mV
mV
mV
mV
mV
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Current I
R
2.5 4 µ A V
R
=25V
Diode Capacitance C
D
7.5 10 pF f=1MHz,V
R
=1V
Reverse Recover
Time
t
rr
5 ns switched from
I
F
=10mA to I
R
=10mA
R
L
=100 Ω , Measured
at I
R
=1mA
¤ Dual Device; For simultaneous continuous use T j =100°C.
3 2
1
3 2
1
2 3
1
3
1
BAT54 SERIES
1
3
2
BAT54 BAT54A BAT54S BAT54C Device Type
SINGLE COMMON
ANODE
SERIES COMMON
CATHODE
Pin Configuration
L4Z L42 L44 L43 Partmarking Detail
30 10 20 0
+125°C
+85°C
TA - Ambient Temperature ( °C)
PD v TA Characteristics
0
90
180
270
330
CT v VR Characteristics
0
5
10
15
0 50 100 150
Forward Voltage V F (V)
IF v VF Characteristics
0 0.6 0.3
+125°C
10 µ
100 µ
1m
10m
100m
1
0.9
+85°C
+25°C
0.15 0.45 0.75
10 µ
100 µ
10m
1m
Reverse Voltage V R (V)
I
R
v V
R
Characteristics
Reverse Voltage VR (V)
0 20 10 30
1 µ
+25°C
TYPICAL CHARACTERISTICS
BAT54 SERIES
3 - 4 3 - 5