Diodes 1N4448HLP - Manual (Page 2)

1N4448HLP
Document number: DS30590 Rev. 12 - 2
2 of 5
www.diodes.com
March 2012
© Diodes Incorporated
1N4448HLP
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V R
80 V
RMS Reverse Voltage V
R(RMS)
57 V
Forward Continuous Current I
FM
300 mA
Average Rectified Output Current I O
95 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs
@ t = 1.0s
I FSM
2.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
250 mW
Thermal Resistance Junction to Ambient (Note 5) R θJA 500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Conditions
Reverse Breakdown Voltage (Note 6) V
(BR)R
80 ⎯ V I
R
= 100
μA
Forward Voltage V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I F = 150mA
Peak Reverse Current (Note 6) I
R
⎯
100
50
30
25
nA
μA
μA
nA V
R
= 80V
V
R
= 75V, T
J
= 150
°C
V
R
= 25V, T
J
= 150 °C
V
R
= 20V
Total Capacitance C
T
⎯ 3.0 pF V
R
= 0.5V, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.